TOSHIBA SG600GXH26 Gate Turn-Off Thyristor Datasheet


TOSHIBA SG600GXH26 Gate Turn-Off Thyristor Datasheet - cover page
Brand
Toshiba
Category
Thyristor
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
183 KB
Published
07 August, 2012
Updated
24 August, 2012
MD5 checksum
1BB986E0305E6D4F9051DD84F6D5C1B0

About this manual

This document is a datasheet for the TOSHIBA SG600GXH26, a low snubber type gate turn-off thyristor (GTO) intended for inverter applications. The device features a repetitive peak off-state voltage of 4500V and an RMS on-state current of 300A.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Instantaneous On-State Current
  • Transient Thermal Impedance
  • Turn-Off Loss
  • Turn-Off Current

Specifications

Repetitive Peak Off-State Voltage4500 V
RMS On-State Current300 A
Peak Turn-Off Current600 A
Critical Rate of Rise of On-State Current600A/ us
Critical Rate of Rise of Off-State Voltage1200V/ us
Operating Junction Temperature Range-40~125 °C
Storage Temperature Range-40~150 °C

Frequently asked questions

What is the application for the SG600GXH26?

The device is designed for inverter applications.

What is the peak gate current rating?

The peak gate current rating is 280 A.

What is the maximum average gate power dissipation?

The maximum average gate power dissipation is 55 W.

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