GT60J321 is a silicon N channel IGBT produced by Toshiba. It is a fourth generation soft switching application that features enhancement mode, high speed and low saturation voltage.
This document is a technical datasheet for the TOSHIBA GT60J321, an Insulated Gate Bipolar Transistor (IGBT) designed for soft switching applications. It represents the 4th generation of enhancement-mode silicon N-channel IGBTs from the manufacturer.
The datasheet provides maximum ratings and detailed electrical characteristics, including collector-emitter voltage, gate-emitter voltage, and various timing parameters such as turn-on and turn-off times. It also includes graphical data on safe operating areas, switching times versus resistance, and capacitance curves.
| Collector-emitter voltage (VcES) | 600 V |
|---|---|
| Gate-emitter voltage (VoGES) | +25 V |
| Collector current (lc) | 80 A |
| Emitter-collector forward De lecr current (ims lECPF) | 120 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55~150 °C |
| Fall time (tr) | 0.30 µs |
The maximum collector current (lc) is rated at 80 A.