This document is a technical datasheet for the TOSHIBA GT60M301, an Insulated Gate Bipolar Transistor (IGBT) of the Silicon N Channel MOS Type. It is designed specifically for high power switching applications.
The datasheet provides maximum ratings including a collector-emitter voltage of 900V and a DC collector current of 60A. Key electrical characteristics are listed, such as gate leakage current, cut-off currents, saturation voltages, and various capacitance values measured at specific frequencies.
| Collector-Emitter Voltage (Vces) | 900 V |
|---|---|
| DC Collector Current | 60 A |
| Emitter-Collector DC Current (Iecr) | 15 A |
| Forward Gate Current (Igcfp) | 120 mA |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55~150 °C |
| Power Dissipation (Po) | 200 W |
The maximum collector-emitter voltage is 900 V.
The maximum junction temperature is 150 °C.
The required screw torque is 0.8 N-m.