This document is a technical datasheet for the TOSHIBA GT60M104, an insulated gate bipolar transistor (IGBT) designed for high power switching applications. The device features a silicon N-channel structure with a collector-emitter voltage rating of 900V and a maximum collector current of 60A.
| Gate-Emitter Voltage | -25 V |
|---|---|
| Collector Power Dissipation | 200 W |
| Junction Temperature | 150 °C |
| Thermal Resistance Rth(j-c) | 0.625 °C/W |
The transistor has a collector power dissipation rating of 200 W when the case temperature is 25°C.
The specified screw torque for installation is 0.8 Nm.