Toshiba SG6000JX28 GTO Thyristor Datasheet


Toshiba SG6000JX28 GTO Thyristor Datasheet - cover page
Brand
Toshiba
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
171 KB
Published
07 August, 2012
Updated
24 August, 2012
MD5 checksum
B8E810AF45ADDF3CA15A713DA2D809AB

About this manual

This document is a technical specification sheet for the Toshiba SG6000JX28, a 6000V repetitive peak off-state voltage Gate Turn-Off (GTO) thyristor designed for inverter applications. The datasheet lists maximum ratings such as RMS on-state current of 2700 A and peak turn-off current of 6000 A.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Resistance
  • Transient Thermal Impedance

Specifications

Repetitive Peak Off-State Voltage (VDRM)6000 V
RMS On-State Current (ID(RMS))2700 A
Peak Turn-Off Current (ITGQM)6000 A
Critical Rate of Rise of On-State Current (di/dt)500 A/ us
Critical Rate of Rise of OffState Voltage (dv/dt)1250 V/ us
Operation Junction Temperature (Tj) Range-40~125 °C
Storage Temperature Range (Tstg)-40~150 °C

Frequently asked questions

What is the critical rate of rise of on-state current?

The critical rate of rise of on-state current is rated at 500 A/ us.

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