TOSHIBA CT60M302 handbook

Brand: Toshiba
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 5
File format: PDF
File size: 265 KB
Published: 01 August, 2012
Updated: 01 August, 2012
MD5 checksum: 2B705B05931E922573999863E20C4648
PDF: TOSHIBA CT60M302 handbook PDF

About this manual

This document is a datasheet for the TOSHIBA GT60M302, an Insulated Gate Bipolar Transistor (IGBT) of the Silicon N Channel MOS Type. It is designed for high power switching applications and features an integrated FRD (Free Wheeling Diode) between the emitter and collector. The device supports a collector current of 60A and a collector-emitter voltage of 900V.

What's inside

Maximum Ratings
Electrical Characteristics
Equivalent Circuit
Switching Time
Safe Operating Area
Thermal Impedance
Reverse Recovery Time

Specifications

Collector-Emitter Voltage	900 V
Collector Power Dissipation	200 W
Junction Temperature	150 °C
Collector-Emitter Saturation Voltage	3.38 V

Frequently asked questions

What is the maximum collector-emitter voltage rating for this transistor?

The device has a maximum collector-emitter voltage of 900 V.

How much screw torque is required to mount the heat sink?

You must apply a screw torque of 0.8 N-m when mounting the device.

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