This document is the FMB100 spec, which introduces the characteristics and parameters of the product
This document is a datasheet for the Fairchild Semiconductor FMB100, an NPN Multi-Chip General Purpose Amplifier designed for general purpose amplifier applications. The device is sourced from Process 10 and is rated for collector currents up to 300 mA.
| Collector-Emitter Voltage | 45 V |
|---|---|
| Collector-Base Voltage | 75 V |
| Emitter-Base Voltage | 6.0 V |
| Collector Current - Continuous | 500 mA |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation | 700 mW |
| Thermal Resistance, Junction to Ambient | 180 °C/W |
| Current Gain - Bandwidth Product | 300 MHz |
The device is designed for general purpose amplifier applications at collector currents to 300 mA.
The maximum collector-emitter voltage is 45 V.
The operating and storage junction temperature range is -55 to +150 °C.