FMBA14 is a NPN Multi-Chip Darlington Transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 30V, maximum collector-base voltage is 30V, maximum emitter-base voltage is 10V, maximum collector current is 1.2A, and operating temperature range is -55 to +150 degrees C.
This document is a technical datasheet for the Fairchild Semiconductor FMBA14, an NPN Multi-Chip Darlington Transistor. The device is designed for applications requiring extremely high current gain at collector currents up to 1.0 A and features a SuperSOT-6 package.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings such as a collector-emitter voltage of 30 V and continuous collector current of 1.2 A. It also lists typical on-characteristics like DC current gain and saturation voltages, along with thermal characteristics and small signal parameters.
| Collector-Emitter Voltage (Vces) | 30 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 30 V |
| Emitter-Base Voltage (Vebo) | 10 V |
| Collector Current - Continuous | 1.2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 700 mW |
| Thermal Resistance, Junction to Ambient | 180 °C/W |
The device supports a continuous collector current of 1.2 A.
The operating and storage junction temperature range is from -55 to +150 °C.
The device uses a SuperSOT-6 package.