BC556/557/558/559/560 are PNP type transistors produced by FAIRCHILD. Its maximum collector-emitter reverse voltage is -65V, maximum collector-base reverse voltage is -80V, maximum emitter-base reverse voltage is -5V, maximum collector current is -100mA, and maximum power consumption is 500mW. The maximum working temperature is 150℃.
This document provides technical specifications for the Fairchild Semiconductor BC556/557/558/559/560 series of PNP epitaxial silicon transistors. It details absolute maximum ratings, electrical characteristics such as current gain (hFE) and saturation voltage, and typical performance curves including static characteristics and frequency response.
| Emitter-Base Voltage | -5 V |
|---|---|
| Collector Current (DC) | -100 mA |
| Collector Power Dissipation | 500 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -65 ~ 150 °C |
These devices are suitable for both switching and amplifier applications.
The BC559 and BC560 models are designated for low noise applications.