BC636 is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. It is mainly used in switch power supply and amplifier circuits.
The document is a technical specification sheet for the BC636 PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. It details the device's suitability for switching and amplifier applications, complementing the BC635 NPN transistor.
Key specifications include an absolute maximum collector-emitter voltage of -45 V and a continuous collector current of -1 A. The datasheet also covers package marking information for various TO-92 variants (BC636, BC636BU, BC636TA) and provides mechanical dimensions.
| Collector-Emitter Voltage (VCER) | -45 V |
|---|---|
| Collector Current (IC) | -1 A |
| Peak Collector Current (ICP) | -1.5 A |
| Collector Power Dissipation (PC) | 1 W |
| Junction Temperature (TJ) | 150 °C |
The device is designed for switching and amplifier applications.
The BC636 transistor is intended for use in switching and amplifier applications.
The BC636 transistor has a collector power dissipation rating of 1 W.
The maximum junction temperature for the BC636 transistor is 150 °C.