This document describes the absolute maximum ratings and electrical characteristics of the BC63916 NPN epitaxial silicon transistor. The transistor has high voltage and current capabilities, making it suitable for switching and amplification applications.
This document provides technical specifications for the Fairchild Semiconductor BC63916, an NPN epitaxial silicon transistor designed for switching and amplifier applications. Key parameters include a collector-emitter voltage of 100V, a maximum collector current of 1A, and operation within a junction temperature range of -55°C to 150°C.
The datasheet includes detailed electrical characteristics such as DC current gain (hFE) ranging from 25 to 250 depending on the test condition. It also features mechanical drawings for the TO-92 package, specifying lead dimensions and clip requirements.
| Collector-Emitter Voltage (Vceo) | 80 V |
|---|---|
| Emitter-Base Voltage (VeBo) | 5 V |
| Collector Current (Io) | 1 A |
| Collector Power Dissipation (Po) | 1 W |
| Operating Junction Temperature Range | -55 ~ 150 °C |
The DC current gain ranges from 25 to 250 depending on the collector current.
The collector-base breakdown voltage (BVcbo) is 100 V.