RFP12N10L 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET is a N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.
The document describes the RFP12N10L as an N-Channel enhancement mode silicon gate power field effect transistor designed for use with logic level (5V) driving sources. It is specifically optimized for applications such as programmable controllers, automotive switching, and solenoid drivers.
| Continuous Drain Current (ID) | 12 A |
|---|---|
| Drain to Source On Resistance (rDS(ON)) | 0.200 ℧ |
| Maximum Power Dissipation (PD) | 60 W |
| Operating and Storage Temperature | -55 to 150oC |
The device provides full rated conduction at gate biases in the 3V to 5V range.
Yes, it is designed for use with logic level driving sources and is compatible with automotive drive requirements.