This document describes the features and characteristics of the RFG50N06, RFP50N06, and RF1S50N06SM N-Channel power MOSFETs from Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the MegaFET process and provide outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
This document provides comprehensive technical data for the RFG50N06, RFP50N06, and RF1S50N06SM N-Channel Power MOSFETs, which are manufactured using the MegaFET process. These devices are designed for use in switching regulators, switching converters, motor drivers, and relay drivers, and can be operated directly from integrated circuits.
The datasheet includes absolute maximum ratings, electrical specifications, typical performance curves, test circuit diagrams, and a PSPICE electrical model. Key features include a 50A continuous drain current, 60V drain-to-source voltage rating, and a low on-resistance of 0.022 Ohms.
The devices can operate at temperatures up to 175°C.
These transistors are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
Yes, these transistors can be operated directly from integrated circuits.
The devices have an operating temperature range that extends up to 175°C.