Si3443DV is a P-Channel 2.5V specified PowerTrench MOSFET. It has a drain-source voltage of -20V and a gate-source voltage of ±8V. The continuous drain current is -4A, and the pulsed drain current is -20A. The device has a maximum power dissipation of 1.6W. The operating and storage junction temperature range is -55 to +150°C.
The Si3443DV is a P-Channel MOSFET produced using Fairchild's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device is available in a SuperSOT-6 package, offering a small footprint and low profile suitable for applications where larger packages are impractical.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | -4 A |
| Pulsed Drain Current | -20 A |
| Power Dissipation (Single Operation) | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 78 °C/W |
| Thermal Resistance (Junction-to-Case) | 30 °C/W |
| Package Type | SuperSOT-6 |
The device is designed for use as a load switch, for battery protection, and for power management applications.
The device features a low gate charge of 7.2nC typical.
The maximum continuous drain current is -4 A.