This is the official datasheet for Si3457DV. It is a single P-channel logic level PowerTrench MOSFET produced by Fairchild. It has been optimized for battery power management applications.
The document describes the Fairchild Si3457DV, a Single P-Channel Logic Level PowerTrench MOSFET designed and produced using Fairchild's advanced PowerTrench process. It is specifically optimized for battery power management applications such as load switches and battery protection circuits.
Key features include a 4A continuous drain current rating, a -30V drain-source voltage capability, and low gate charge characteristics. The device operates within a junction temperature range of -55 to +150 °C and is available in the SuperSOT-6 package.
| Drain-Source Voltage (Vss) | -30 V |
|---|---|
| Gate-Source Voltage (Vgs) | +25 V |
| Maximum Power Dissipation (Ta=25°C) | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
This device is optimized for battery power management applications.
The maximum drain-source voltage is -30 V and the maximum gate-source voltage is +25 V.
The device supports a continuous drain current of 4 A.