This document describes the features and characteristics of Fairchild Semiconductor's SI4435DY 30V P-Channel PowerTrench MOSFET, which is suitable for power management, load switch, and battery protection applications.
This document is a technical datasheet for the Fairchild Semiconductor SI4435DY, a rugged P-Channel MOSFET utilizing advanced PowerTrench technology. The device is designed for power management applications requiring gate drive voltage ratings between 4.5V and 25V.
Key features include high performance trench technology for extremely low on-resistance, fast switching speed, and low gate charge (17nC typical). It offers a continuous drain current of -8.8A at -30V and is available in an SO-8 package.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -8.8 A |
| Pulsed Drain Current | -50 A |
| Operating Junction Temperature Range | -55 to +175 °C |
The typical gate charge is 17nC.
This device is optimized for power management and load switch applications.
The maximum continuous drain current is -8.8 A.
The operating and storage junction temperature range is from -55 to +175 °C.