Fairchild Semiconductor Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor Datasheet

Si4532DY* is a dual N- and P-channel enhancement mode field effect transistor with unique features and characteristics.


Fairchild Semiconductor Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
327 KB
Published
12 July, 2012
Updated
28 September, 2023
MD5 checksum
3F999B2A771A376DA1D58CE51A571284

About this manual

The Si4532DY is a dual N- and P-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This process is designed to minimize on-state resistance and provide superior switching performance, making the device particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Package Marking and Ordering Information
  • Electrical Characteristics
  • Switching Characteristics
  • Drain-Source Diode Characteristics
  • Trademarks
  • Product Status Definitions

Specifications

Power Dissipation for Dual Operation2 W

Frequently asked questions

What is the primary application for the Si4532DY?

The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits.

What is the maximum power dissipation when the device operates in dual mode?

The maximum power dissipation for dual operation is 2 W.

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