This document introduces HUF75329D3 and HUF75329D3S N-Channel UltraFET power MOSFETs, which are manufactured using the innovative UltraFET process and have low on-resistance and outstanding performance. This device is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document describes the HUF75329D3 and HUF75329D3S devices, which are 20A, 55V N-Channel UltraFET Power MOSFETs. These components utilize an advanced process technology to achieve low on-resistance per silicon area, making them suitable for switching regulators, converters, motor drivers, and power management applications.
| Drain Current (Continuous) | 20 A |
|---|---|
| Drain to Source Voltage | 55 V |
| Power Dissipation | 128 W |
| Operating Temperature Range | -55 to 175 °C |
They are designed for use in switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management.
The maximum continuous drain current is 20 A.