HUF75321P3, HUF75321S3S 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. This product has a rated current and voltage of 35A and 55V. It uses the innovative UltraFET® process for manufacturing and achieves the lowest silicon area switch resistance, resulting in outstanding performance. This device can withstand high energy in the avalanche mode and the diode has a very low reverse recovery time and stored charge. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Fairchild HUF75321P3 and HUF75321S3S N-Channel UltraFET Power MOSFETs. These devices utilize advanced process technology to achieve low on-resistance and are designed for applications requiring high power efficiency, such as switching regulators, motor drivers, and power management in portable products. The document provides ordering information for TO-220AB and TO-263AB packages.
| Drain to Source Voltage | 55 V |
|---|---|
| Continuous Drain Current | 35 A |
| On Resistance (Typical) | 0.034 Ohm |
| Thermal Resistance Junction to Case | 1.6 C/W |
The device is rated for a continuous drain current of 35 A.
The maximum drain-to-source voltage is 55 V.
The device operates and stores between -55°C and 175°C.