English abstract: This document introduces the xxx brand xxx model product's features and characteristics, and conducts tests on it. The test results show that xxx product has xxx, xxx, xxx and other features, and is suitable for xxx scenarios.
This document is a datasheet for the Fairchild Semiconductor FQD4N50 and FQU4N50 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well suited for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge configurations.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 2.6 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 260 mJ |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-252 (DPAK) |
The typical gate charge is 10 nC.
Yes, the device is RoHS Compliant.
The typical on-resistance is 2.72 Ohms at Vgg = 10 V.