This datasheet provides the features and characteristics of FQD3N50C / FQU3N50C 500V N-Channel MOSFET.
This document provides the design specifications for the FQD3N50C and FQU3N50C, which are 500V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 2.5 A |
| Single Pulsed Avalanche Energy | 200 mJ |
| Power Dissipation (Tg = 25°C) | 35 W |
| Operating and Storage Temperature Range | -55 to +150 °C |