The QFET series is the company's latest generation of high performance, high reliability, high integration, low power consumption and high cost-effective automotive grade power electronic devices. The product line covers fast recovery diodes, Schottky diodes, rectifier bridges, power modules and IGBTs. QFET adopts advanced design technology and process, with excellent performance, reliability and high cost performance, widely used in automotive electronics, new energy vehicles, rail transit, industrial control, communications and other fields
This document provides design specifications for the FQD5N40 and FQU5N40, which are 400V N-Channel MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them suitable for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge configurations.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 3.4 A |
| Pulsed Drain Current | 13.6 A |
| Gate-Source Voltage | +/- 30 V |
| Single Pulsed Avalanche Energy | 290 mJ |
| Power Dissipation (Ta = 25°C) | * 25 Ww |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 3.4 A when the case temperature is 25°C.
The device has a maximum drain-source voltage rating of 400 V.
The operating and storage temperature range is from -55 to +150 °C.