SSN1N45B is a 450V N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses Fairchild's proprietary planar DMOS technology, which features low on-state resistance, superior switching performance, high energy pulse voltage tolerance, and dv/dt capability. It is well suited for half-bridge electronic ballasts.
This document is a datasheet for the Fairchild Semiconductor SSN1N45B, an N-Channel enhancement mode power field effect transistor. The device is produced using Fairchild's proprietary planar, DMOS technology and is designed to minimize on-state resistance while providing superior switching capabilities. It is well-suited for electronic ballasts based on half bridge configuration.
| Drain-Source Voltage | 450 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 0.5 A |
| Continuous Drain Current (Tg = 100°C) | 0.32 A |
| Pulsed Drain Current | 4.0 A |
| Gate-Source Voltage | +50 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum operating and storage temperature range is -55 to +150 °C.