This document introduces the HUF75332G3, HUF75332P3, and HUF75332S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation. These devices are made using the innovative UltraFET process and offer the lowest possible on-resistance and outstanding performance. They are capable of withstanding high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Fairchild HUF75332 series of N-Channel UltraFET Power MOSFETs. These devices utilize advanced process technology to achieve low on-resistance and are designed for high-efficiency applications such as switching regulators, motor drivers, and power management in portable products. The series includes three package variants: TO-247 (suffix G), TO-220AB (suffix P), and TO-263AB (suffix S).
| Drain Current (Continuous) | 60 A |
|---|---|
| Drain to Source Voltage | 55 V |
| Power Dissipation | 145 W |
| Operating Temperature Range | -55 to 175 °C |
| Drain to Source On Resistance (Typical) | 0.019 Ohm |
| Turn-On Time (Typical) | 130 ns |
| Reverse Recovery Time (Typical) | 75 ns |
The series is available in TO-247, TO-220AB, and TO-263AB packages.
The maximum continuous drain current is 60 A.
Yes, Temperature Compensated PSPICE and SABER Models are available on the web.