This datasheet introduces the features and applications of HUF75339G3, HUF75339P3, HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
The document is a technical data sheet for the HUF75339G3, HUF75339P3, and HUF75339S3S N-Channel UltraFET Power MOSFETs. These devices utilize an innovative process to achieve low on-resistance per silicon area, making them suitable for switching regulators, motor drivers, and power management applications in portable products.
The datasheet provides absolute maximum ratings, electrical specifications including off-state and on-state parameters, thermal characteristics, and switching specifications. It also includes typical performance curves, test circuit diagrams, waveforms, and a PSPICE electrical model sub-circuit for simulation purposes.
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 55 V |
| On Resistance RDS(ON) | 0.012 Ohm |
| Reverse Recovery Time (trr) | 85 ns |
The maximum continuous drain current is 75 A.
The device supports a continuous drain current of 75 A.
The operating and storage temperature range is -55 to 175 °C.