75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
This document provides comprehensive electrical and thermal specifications for the HUF75344 series of N-Channel power MOSFETs. These devices utilize the UltraFET process to achieve low on-resistance and are designed for high-efficiency applications such as switching regulators, motor drivers, and power management circuits. The datasheet covers three specific package variants: HUF75344G3 (TO-247), HUF75344P3 (TO-220AB), and HUF75344S3S (TO-263AB).
The document includes absolute maximum ratings, electrical characteristics for both on and off states, and source-to-drain diode specifications. It also features typical performance curves illustrating power dissipation, safe operating areas, and capacitance characteristics across various temperatures. Additionally, the datasheet provides simulation models for PSPICE and SABER to assist with circuit design.
| Drain to Source Voltage | 55 V |
|---|---|
| Continuous Drain Current | 75 A |
| Power Dissipation | 285 W |
| Drain to Source On Resistance | 8.0 mΩ |
| Thermal Resistance Junction to Case | 0.52 °C/W |
| Reverse Recovery Time | 105 ns |
The maximum continuous drain current is 75 A.
Yes, Temperature Compensated PSPICE and SABER Models are available.