This document describes the absolute maximum ratings and electrical characteristics of BC337/338 NPN epitaxial silicon transistors. The transistors are suitable for AF driver stages and low power output stages, and are complementary to BC327/BC328.
This document provides the design specifications for the BC337 and BC338 NPN epitaxial silicon transistors, intended for switching and amplifier applications. It serves as a complement to the BC327/BC328 series and is suitable for AF-driver stages and low power output stages.
| Collector Current (DC) | 800 mA |
|---|---|
| Collector Power Dissipation | 625 mW |
| Storage Temperature | -55 ~ 150 °C |
No, Fairchild's products are not authorized for use as critical components in life support devices or systems without express written approval.
The maximum DC collector current is 800 mA.
The maximum collector power dissipation is 625 mW.