This document introduces the absolute maximum ratings, product features, technical specifications of NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor.
This document provides technical specifications for the Fairchild NDP7060 and NDB7060 N-Channel Enhancement Mode Field Effect Transistors. These devices utilize Fairchild's proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications such as automotive systems, DC/DC converters, and PWM motor controls.
| Drain-Source Voltage | 60 V |
|---|---|
| Drain Current (Continuous) | 75 A |
| Maximum Power Dissipation | 150 W |
| Operating Temperature Range | -65 to 175 °C |
| Package Types | TO-220 and TO-263 (D'PAK) |
| Maximum Junction Temperature | 175°C |
The maximum junction temperature rating is 175°C.
The maximum continuous drain current is 75 A.
The maximum power dissipation at 25°C is 150 W.