Fairchild NDS0610 P-Channel Enhancement Mode FET Datasheet

NDS0610 P-Channel Enhancement Mode Field Effect Transistor is a voltage controlled small signal switch with low RON(on) and high saturation current.


Fairchild NDS0610 P-Channel Enhancement Mode FET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
141 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
C698769A86FA06C3AC1FD3686A564130

About this manual

The document describes the Fairchild NDS0610, a P-Channel enhancement mode field effect transistor produced using proprietary DMOS technology. It is specifically suited for low voltage applications requiring a low current high side switch, capable of delivering up to 1A of current with minimal on-state resistance.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics

Specifications

Drain-Source Voltage (Vss)-60 V
Gate-Source Voltage (Vgs)+20 V
Operating Junction Temperature Range-55 to +150 °C

Frequently asked questions

What is the maximum continuous drain current rating?

The device can handle a continuous drain current of up to 0.12 A.

What is the maximum power dissipation?

The maximum power dissipation is rated at 0.36 W.

What are the operating and storage junction temperature limits?

The device operates and stores within a range of -55 to +150 °C.

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