This document is the user manual of NDP6060L/NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor.
This document is a technical datasheet for the NDP6060L and NDB6060L, which are logic level N-Channel enhancement mode power field effect transistors. Produced using Fairchild's proprietary high cell density DMOS technology, these devices are designed to minimize on-state resistance and provide superior switching performance.
| Drain Current (Continuous) | 48 A |
|---|---|
| Total Power Dissipation | 100 W |
| Maximum Junction Temperature | 175 °C |
| Drain-Source Voltage | 60 V |
The device supports a continuous drain current of 48 A.
The device operates and stores within a temperature range of -65 to 175 °C.