Fairchild NDS332P P-Channel Enhancement Mode FET Datasheet

The NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor is a low voltage application field effect transistor produced by Fairchild. The product has extremely low on-state resistance and is suitable for notebook computer power management, portable products and consumer electronics applications.


Fairchild NDS332P P-Channel Enhancement Mode FET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
85 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
D364BA67821958C4F65E16C263E35E72

About this manual

The Fairchild NDS332P is a P-Channel logic level enhancement mode power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. These devices are specifically tailored to minimize on-state resistance and are suited for low voltage applications such as notebook computer power management and portable electronics where fast high-side switching and low in-line power loss are required.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Electrical Characteristics
  • Switching Test Circuit
  • Switching Waveforms
  • Maximum Safe Operating Area
  • Transient Thermal Response Curve

Specifications

Drain-Source Voltage-20 V
Gate-Source VoltageContinuous +8 V
Continuous Drain Current-1 A
Maximum Power Dissipation0.5 W
Operating Temperature Range-55 to 150 °C
Thermal Resistance Junction-to-Ambient250 °C/W
Thermal Resistance Junction-to-Case75 °C/W
Package TypeSuperSOT-3

Frequently asked questions

What is the maximum continuous drain current?

The maximum continuous drain current is -1 A.

What is the on-state resistance at Vgs=-2.7 V?

The on-state resistance is 0.41 Ω at Vgs=-2.7 V.

What is the turn-on delay time?

The turn-on delay time is 8 ns.

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