NDS0605 is a Fairchild P-channel enhancement mode field effect transistor with low RDS(ON), high density, and high saturation current, which is suitable for low voltage low current applications.
The document describes the Fairchild Semiconductor NDS0605, a P-Channel enhancement mode field effect transistor produced using proprietary high cell density DMOS technology. It is designed to minimize on-state resistance and provide fast switching, making it suitable for low voltage applications requiring a low current high side switch with currents up to 1A.
| Drain-Source Voltage | -60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -0.18 A |
| Maximum Power Dissipation | 0.36 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 350 °CA/W |
The maximum continuous drain current is -0.18 A.
The maximum power dissipation is 0.36 W.
The operating and storage junction temperature range is -55 to +150 °C.