The NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor is a high density, DMOS technology product produced by Fairchild. This device has a very low RDS(ON) and is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching and low in-line power loss are needed in a very compact area.
The NDS331N is an N-Channel logic level enhancement mode power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It is designed to minimize on-state resistance and is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low in-line power loss in a small outline surface mount package.
The device is available in an industry standard outline SOT-23 surface mount package using the proprietary SuperSOT™-3 design. Key features include high density cell design for extremely low on-resistance, exceptional on-resistance and maximum DC current capability, and operation within a temperature range of -55 to 150 °C.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | -8 V |
| Maximum Drain Current - Continuous | 1.3 A |
| Maximum Power Dissipation | 0.5 W |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 250 °C/W |
| Thermal Resistance, Junction-to-Case | 75 °C/W |
| Package Type | SuperSOT™-3 |
The maximum continuous drain current is 1.3 A.
The device operates and stores within a temperature range of -55 to 150 °C.
The NDS331N uses an industry standard outline SOT-23 surface mount package with the proprietary SuperSOT™-3 design.