NDS351AN is a Fairchild Semiconductor N-Channel Logic Level MOSFET that is produced using PowerTrench technology, and has ultra-low on-resistance, ultra-low gate charge and ultra-small package.
This document is a technical datasheet for the Fairchild Semiconductor NDS351AN, an N-Channel Logic Level PowerTrench MOSFET designed for low voltage applications such as notebook computers and portable phones. The device utilizes advanced trench technology to minimize on-state resistance while maintaining superior switching performance in a SuperSOT™-3 SOT-23 surface mount package.
The datasheet provides absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters like capacitance and gate charge, and typical characteristic curves. It also includes information on the drain-source diode, thermal resistance values, and safe operating areas for single pulse power dissipation.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Continuous Drain Current (Id) | 1.4 A |
The maximum continuous drain current is 1.4 A.
Yes, it is particularly suited for low voltage applications in notebook computers and portable phones.