This document introduces the features and characteristics of NDP6060/NDB6060.
This document is a technical datasheet for the Fairchild NDP6060 and NDB6060, which are N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 48 A |
| Total Power Dissipation | 100 W |
| Maximum Junction Temperature (Tj) | 175 °C |
| Static Drain-Source On-Resistance (RDS(on)) Typ | 0.025 Ω |
| Package Types | TO-220 and TO-263 (D'PAK) |
The maximum junction temperature rating is 175°C.
Yes, they are particularly suited for low voltage applications such as automotive circuits.