The FQPF19N10 is a 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching performance, and the ability to withstand high-energy pulses in avalanche and commutation mode. It is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
This document is a datasheet for the Fairchild FQPF19N10, a 100V N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 13.6 A |
| Continuous Drain Current (Tj = 100°C) | 9.6 A |
| Pulsed Drain Current | 54.4 A |
| Gate-Source Voltage | +25 V |
| Single Pulsed Avalanche Energy | 220 mJ |
| Power Dissipation (Tj = 25°C) | 38 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 3.95 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
| On-Resistance | 0.12 Ohm |
| Package Type | TO-220F |
The device is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.