The FDS9934C is a dual N- and P-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild Semiconductor Corporation's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document is a datasheet for the Fairchild Semiconductor FDS9934C, a complementary pair of dual N- and P-Channel enhancement mode power field effect transistors. These devices utilize the PowerTrench process to minimize on-state resistance while maintaining superior switching performance, making them suitable for low voltage and battery-powered applications.
| Drain-Source Voltage (Q1) | 20 V |
|---|---|
| Drain-Source Voltage (Q2) | -20 V |
| Power Dissipation (Dual Operation) | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The operating and storage junction temperature range is -55 to +150 °C.
The maximum power dissipation for dual operation is 2 W.
The operating and storage junction temperature range is from -55 to +150 °C.