This document describes the features and characteristics of the FDS8870 N-Channel PowerTrench® MOSFET, including low rDS(on), low gate charge, high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDS8870, an N-Channel PowerTrench MOSFET. The device features low on-resistance (4.2mΩ) and high current handling capabilities, optimized for use in DC/DC converters with synchronous or conventional switching PWM controllers.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-to-source voltage of 30V and continuous drain currents up to 18A. It details thermal resistance values based on mounting pad area, capacitance specifications, and typical performance curves for parameters like turn-on/off times and saturation characteristics.
| Drain to Source Voltage | 30 V |
|---|---|
| On Resistance (Typical @ 10V/18A) | 4.2 mΩ |
| Operating Temperature Range | -55 to 150 °C |
| Package Type | SO-8 |
The part has a maximum power dissipation rating of 25 W under standard test conditions.