This document provides the maximum ratings and thermal characteristics of the FDS2672 N-Channel UltraFET Trench® MOSFET, as well as its features and application.
The document describes the Fairchild Semiconductor FDS2672, an N-Channel UltraFET Trench MOSFET designed for applications such as DC-DC conversion. It utilizes advanced trench technology to minimize on-state resistance while maintaining superior switching performance.
Key electrical characteristics include a maximum drain-to-source voltage of 200V and a continuous drain current of 3.9A at 25°C. The device features fast switching speeds, low gate charge, and is RoHS compliant.
| Drain to Source Voltage (Vdss) | 200 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) | 3.9 A |
| Power Dissipation (Pd) | 25 W |
| Operating and Storage Temperature (Tj, Tstg) | -55 to 150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | 25 °C/W |
| On-Resistance (Rds(on)) at Vgs=10V, Id=3.9A | 70 mΩ |
| Turn-On Delay Time (td(on)) | 22 ns |
The device is suitable for DC-DC conversion applications.
Yes, the product is RoHS compliant.