FDS86252 is an N-Channel Power Trench® MOSFET with a maximum on-state resistance of 55mΩ and a maximum drain current of 4.5A. It utilizes high-performance trench technology for extremely low on-state resistance and high power and current handling capability. It is widely used in DC-DC conversion MOSFET applications.
This document is a technical datasheet for the Fairchild Semiconductor FDS86252, an N-Channel Power Trench MOSFET designed for high power and current handling in surface mount applications. The device features a maximum drain to source voltage of 150V and continuous drain current of 4.5A.
| Drain to Source Voltage (Vdss) | 150 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) | 4.5 A |
| Power Dissipation (Ta = 25°C) | 5.0 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 4.5 A and a pulsed drain current of 20 A.
The maximum power dissipation at a junction temperature of 125°C is 2.5 W.
The device operates and stores within a junction temperature range of -55 to +150 °C.