The FDS8638 N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET with extremely low on-state resistance. It has a maximum drain-source voltage of 40 V and a maximum drain-source current of 18 A. The maximum switching loss is 2.5 W. This device is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which provides high reliability and low power consumption. It is suitable for applications such as synchronous rectifiers and load switches.
This document is a technical datasheet for the Fairchild Semiconductor FDS8638, an N-Channel PowerTrench MOSFET. The device utilizes advanced Power Trench technology to achieve a maximum static drain-to-source on-resistance of 4.3 mΩ at Vgs = 10V and Id = 18A.
| Drain to Source Voltage (Vdss) | 40 V |
|---|---|
| Continuous Drain Current (Id) | 18 A |
| Static Drain to Source On Resistance (Rds(on)) | 4.3 mΩ |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
Yes, the device is listed as RoHS Compliant in the features section.
The datasheet recommends using it in Synchronous Rectifier and Load Switch applications.