The FDS2582 is a N-Channel PowerTrench® MOSFET manufactured by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A, Qg(tot) = 19nC (Typ.), VGS = 10V. It is suitable for DC/DC converters and Off-Line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems, high voltage synchronous rectifier, direct injection / diesel injection systems, 42V automotive load control and electronic valve train systems.
This document is a technical datasheet for the Fairchild FDS2582 N-Channel PowerTrench MOSFET. The device is rated for 150V drain-to-source voltage and 4.1A continuous drain current at 25°C, with a typical on-resistance of 66mΩ. It is designed for applications such as DC/DC converters, off-line UPS systems, and automotive load control.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Tj = 25°C) | 4.1 A |
| Continuous Drain Current (Tj = 100°C) | 2.6 A |
| Pulsed Drain Current | 4.1 A |
| Power Dissipation | 25 W |
| Operating and Storage Temperature | -55 to 150 °C |
| Thermal Resistance, Junction to Case | 25 °C/W |
| Drain to Source On Resistance (Typical) | 66 mΩ |
The MOSFET has a maximum rated drain-to-source voltage of 150 V.
The provided graphs show peak current capability for pulse durations up to 80 seconds.