FDS8690 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. Its rated voltage is 30V and its rated current is 14A. Its maximum on-resistance is 7.6mΩ. This MOSFET uses high-performance trench technology, which provides extremely low on-resistance and fast switching speed. It also has extremely low gate charge, high power and current handling capability, and has been 100% RG tested and complies with RoHS standards.
The document describes the Fairchild FDS8690, an N-Channel MOSFET designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers. Key features include extremely low on-resistance (Rds(on)) of 7.6mΩ at Vgs=10V and fast switching speeds.
| Drain to Source Voltage (Vdss) | 30 V |
|---|---|
| On-Resistance (Rds(on)) @ Vgs=10V, Id=14A | 7.6 mΩ |
| Operating Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 14 A and a pulsed drain current of 100 A.
The maximum drain-to-source voltage is rated at 30 V.
The power dissipation is 2.5 W under these specific mounting conditions.