The FDS86240 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a maximum resistance of 19.8 mΩ, a working voltage of 150 V, and a maximum current of 7.5 A
This document is a technical datasheet for the Fairchild Semiconductor FDS86240, an N-Channel PowerTrench MOSFET rated at 150V and 7.5A with a maximum on-resistance of 19.8 mΩ. The device utilizes advanced trench technology optimized for switching performance and ruggedness in high-power applications.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, threshold voltage, static drain-to-source resistance, and dynamic parameters such as input capacitance and gate charge. It also details thermal characteristics, typical performance curves under various conditions, and package ordering information.
| Drain to Source Voltage (Vdss) | 150 V |
|---|---|
| Continuous Drain Current (Id) | 7.5 A |
| Pulsed Drain Current (Id) | 30 A |
| Power Dissipation (Ta = 25°C) | 5.0 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (RθJC) | 25 °C/W |
| Static Drain to Source On Resistance (Vgs=10V, Id=7.5A) | 19.8 mΩ |
| Package Type | SOT-23 (implied by S0-8 and reel info) |
The maximum static drain-to-source on resistance (Rds(on)) is 19.8 mΩ at Vgs = 10V and Id = 7.5A.
The maximum continuous drain current is 7.5 A.
The maximum drain to source voltage is 150 V.
The operating and storage junction temperature range is -55 to +150 °C.