The FDS8840NZ is an N-channel power trench MOSFET with features including a maximum rDS(on) of 4.5 mΩ, a maximum rDS(on) of 6.0 mΩ, and HBM ESD protection.
The FDS8840NZ is a high-performance N-Channel PowerTrench MOSFET designed to minimize losses in power conversion applications while maintaining excellent switching performance. It features an extremely low on-resistance of 4.5 mΩ at Vgs = 10V and Id = 18.6A, along with a high HBM ESD protection level of 6 kV typical.
| Continuous Drain Current | 18.6 A |
|---|---|
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance (Vgs = 10 V) | 4.5 mΩ |
The device supports a continuous drain current of 18.6 A.
The component operates within a junction temperature range from -55 to +150 °C.
The MOSFET provides an HBM ESD protection level of 6 kV typical.