This document describes the features and characteristics of the FDS2572 N-Channel MOSFET device, including optimized Rds(on), low ESR, low total and Miller gate charge, suitable for high frequency DC to DC converter applications.
This document is a datasheet for the Fairchild FDS2572, an N-Channel UltraFET Trench MOSFET designed for high-frequency DC to DC converters. Key features include a 150V drain-to-source voltage rating, 0.047 Ohms on-resistance, and a 4.9A continuous drain current. The device is optimized for efficiency in telecom and data-com distributed power architectures, as well as 48-volt and 24-volt topologies.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Tj = 25°C) | 4.9 A |
| Continuous Drain Current (Tj = 100°C) | 3.4 A |
| Drain to Source On Resistance (Typ) | 0.047 Ohms |
| Operating and Storage Temperature | -55 to 150 °C |
The device is ideal for high frequency DC to DC converters, telecom and data-com distributed power architectures, and 48-volt or 24-volt topologies.
The maximum rated junction temperature is 150°C.
The typical gate to source threshold voltage is 2 to 4 V.