The FDS86141 is a N-channel PowerTrench® MOSFET with a maximum RDS(on) of 23 m, a maximum rated voltage of 100 V, and a maximum current of 7 A. The product is produced using Fairchild Semiconductor's advanced PowerTrench® process and offers ultra-low RDS(on) and superior switching performance.
This document is a technical datasheet for the Fairchild Semiconductor FDS86141, an N-channel PowerTrench MOSFET. The device features a maximum drain-to-source voltage of 100 V and a continuous drain current rating of 7 A at 25°C.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltages, on-resistance values under various gate voltages, and switching parameters such as turn-on delay time. It also details thermal resistance specifications and typical performance curves for capacitance, safe operating areas, and transient thermal response.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Gate to Source Voltage (VGSS) | +20 V |
| Continuous Drain Current (ID) | 7 A |
| Pulsed Drain Current | 30 A |
| Power Dissipation (Ta = 25°C) | 5.0 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a maximum continuous drain current of 7 A.
It has a power dissipation rating of 5.0 W when the ambient temperature is 25°C.
The component operates and stores within a temperature range of -55 to +150 °C.