This is a document about the FDS2670 200V N-Channel PowerTrench MOSFET. This MOSFET features high performance trench technology, with low RDS(ON), low gate charge, fast switching speed, and high power handling capability. It is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. By using this MOSFET, higher driving safety and efficiency can be achieved in DC/DC power supply designs.
This document is a datasheet for the Fairchild Semiconductor FDS2670, an N-Channel PowerTrench MOSFET designed to improve the efficiency of DC/DC converters. The device features a 200V drain-source voltage rating and a continuous drain current of 3.0A.
| Drain-Source Voltage | 200 V |
|---|---|
| Operating Junction Temperature | -55 to +150 °C |
The maximum continuous drain current is 3.0 A.
The maximum drain-source voltage rating is 200 V.
The operating and storage junction temperature range is -55 to +150 °C.