This document describes the features and characteristics of the FDS86242 N-Channel PowerTrench MOSFET, including maximum on-resistance, high-performance trench technology, high power and current handling capability, etc.
This document is a datasheet for the Fairchild Semiconductor FDS86242, an N-Channel PowerTrench MOSFET designed for high performance and ruggedness. The device is optimized for switching applications and features a maximum drain to source voltage of 150V and a continuous drain current of 4.1A.
The operating and storage junction temperature range is -55 to +150 °C.