Fairchild Semiconductor FDS86140 N-Channel PowerTrench MOSFET Datasheet

FDS86140 N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET with extremely low on-resistance and high power and current handling capability. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.


Fairchild Semiconductor FDS86140 N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
250 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
FCFFCB3A4995C552D07A71DEC649C833

About this manual

This document is a datasheet for the Fairchild Semiconductor FDS86140 N-Channel PowerTrench MOSFET. The device utilizes advanced Power Trench technology to achieve extremely low on-resistance and high ruggedness. It is designed for applications such as DC/DC converters, off-line UPS systems, and high-voltage synchronous rectifiers.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking
  • Trademarks
  • Disclaimer
  • Product Status Definitions

Specifications

Package TypeSO-8

Frequently asked questions

Is this product RoHS compliant?

Yes, the product is RoHS compliant.

What is the maximum continuous drain current for the FDS86140?

The maximum continuous drain current is 11.2 A.

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